Engineer- DRAM, Advanced DRAM and EM Device/Cell Technology

Estados Unidos

Boise, Idaho, United States

Python

Sobre la oportunidad

Our vision is to transform how the world uses information to enrich life for all.

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

We are the R&D DRAM Device and Cell Technology Group at Micron, working at the heart of future memory scaling in an industry‑leading 300mm R&D facility. We explore new device concepts, push the limits of DRAM cell performance, and turn deep physics understanding into manufacturable technology. If you enjoy learning fast, solving hard problems, and collaborating across process areas, this team delivers!

In this role, you will play a critical part in defining and validating future DRAM device and cell technologies. As a Device Engineer, you will characterize memory arrays, analyze electrical behavior and failures, and influence process and material decisions that directly impact yield, quality, and performance. Your work will shape the electrical foundation of next‑generation DRAM products.

Responsibilities

Define and drive electrical specifications for DRAM, Advanced DRAM and emerging memory technologies, translating product requirements into device-level targets for performance, reliability and scaling
Design, implement, and interpret experiments to optimize cell and access device performance. This includes running materials experiment, developing new integration schemes and defining new characterization methodologies
Develop physical and electrical models (TCAD and compact modeling) to identify performance, yield and reliability limiters, using advanced materials characterization, device physics insight, and statistical data analysis
Create and or improve stress methodologies to evaluate device reliability (e.g., TDDB, leakage, variability, endurance) and establish robust design margins.
Analyze array-level behavior using probe, parametric, and backend data to root-cause variability, optimize distributions, and improve yield, quality, and cost
Collaborate cross-functionally with process integration, design, and product engineering teams to translate device insights into technology and product improvements, enabling best-in-class memory solutions

Minimum Qualifications

MS with 5+ years of industry experience or PhD with hands‑on research in Electrical Engineering, Physics, or related field
Strong expertise in semiconductor device physics including CMOS, diodes, and related devices
Deep knowledge of mainstream memory technologies such as DRAM, NAND, NOR, or SRAM
Experience with DRAM array characterization and failure analysis
Proficiency in data analysis, DOE, Agentic AI, and statistical techniques using tools such as JMP or Python

Preferred Qualifications

Strong written and verbal communication skills
Experience working across process integration and circuit or architecture domains
Demonstrated ability to collaborate with multi‑functional engineering teams
Proven problem‑solving skills and ability to communicate technical status to management

As a world leader in the semiconductor industry, Micron is dedicated to your personal wellbeing and professional growth. Micron benefits are designed to help you stay well, provide peace of mind and help you prepare for the future. We offer a choice of medical, dental and vision plans in all locations enabling team members to select the plans that best meet their family healthcare needs and budget. Micron also provides benefit programs that help protect your income if you are unable to work due to illness or injury, and paid family leave. Additionally, Micron benefits include a robust paid time-off program and paid holidays. For additional information regarding the Benefit programs available, please see the Benefits Guide posted on micron.com/careers/benefits micron.com/careers/benefits.

Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.

To learn about your right to work click here. justice.gov/crt/worker-information

To learn more about Micron, please visit micron.com/careers micron.com/careers

For US Sites Only: To request assistance with the application process and/or for

reasonable accommodations, please contact Micron’s People Organization at [email protected] [[email protected]] or 1-800-336-8918 (select option #3)

Micron Prohibits the use of child labor and complies with all applicable laws, rules, regulations, and other international and industry labor standards.

Micron does not charge candidates any recruitment fees or unlawfully collect any other payment from candidates as consideration for their employment with Micron.

AI alert: Candidates are encouraged to use AI tools to enhance their resume

and/or application materials. However, all information provided must be accurate and reflect the candidate's true skills and experiences. Misuse of AI to fabricate or misrepresent qualifications will result in immediate disqualification.

Fraud alert: Micron advises job seekers to be cautious of unsolicited job offers

and to verify the authenticity of any communication claiming to be from Micron by checking the official Micron careers website in the About Micron Technology, Inc.

Idiomas

Engineer- DRAM, Advanced DRAM and EM Device/Cell Technology

Sobre la oportunidad

Responsibilities

Minimum Qualifications

Preferred Qualifications

Sigue explorando

Tu próximo empleoya está buscándote.

Más oportunidades con un solo perfil

Ingeniero de Despliegue Avanzado – Senior - 5G/6G/NTN

Ingeniero de Software Senior de Tecnologías Inalámbricas (Protocol Stack 5G/6G)

Ingeniero Técnico Junior